Scaled Projections of Empirically Verified Hybrid Edge Terminated Vertical GaN Diodes to 20 kV-Reference-Cited by-同舟云学术

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Scaled Projections of Empirically Verified Hybrid Edge Terminated Vertical GaN Diodes to 20 kV

Published:2023-12-04 Issue: Volume: Page:1-5
ISSN:
Container-title:2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
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Author:

Nelson Tolen¹,Pandey Prakash¹,Georgiev Daniel G.¹,Khanna Raghav¹,Hontz Michael R.²,Jacobs Alan G.³,Gallagher James C.³,Koehler Andrew D.³,Hobart Karl D.³,Anderson Travis J.³

Affiliation:

1. University of Toledo,EECS Department,Toledo,OH,USA

2. Naval Surface Warfare Center,Philadelphia Division,Philadelphia,PA,USA

3. U.S. Naval Research Laboratory,Washington, D.C.,USA

Funder

Office of Naval Research

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10382185/10382163/10382218.pdf?arnumber=10382218

Reference18 articles.

1. Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges

2. Impact of Wide-Bandgap Technology on Renewable Energy and Smart-Grid Power Conversion Applications Including Storage

3. 20 kV gallium nitride electromagnetic pulse arrestor for grid reliability;Kaplar,2019

4. Semiconductors for high‐voltage, vertical channel field‐effect transistors

5. 12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design;Applied Physics Letters;2024-03-25

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