Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices-Reference-Cited by-同舟云学术

Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices

Published:2024 Issue: Volume: Page:1-7
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Yifan¹^ORCID,Porter Matthew¹^ORCID,Xiao Ming¹^ORCID,Lu Albert²,Yee Nathan²,Kravchenko Ivan³^ORCID,Srijanto Bernadeta³,Cheng Kai⁴,Wong Hiu Yung²^ORCID,Zhang Yuhao¹^ORCID

Affiliation:

1. The Bradley Department of Electrical and Computer Engineering, Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA

2. Department of Electrical Engineering, San Jose State University, San Jose, CA, USA

3. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA

4. Enkris Semiconductor Inc, Suzhou, China

Funder

National Science Foundation

Power Management Consortium of the Center for Power Electronics Systems

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/4358746/10285714.pdf?arnumber=10285714

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Decomposition behavior of GaN under solid and ambient N2 pressure;Materials Letters;2024-11

2. Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact;Applied Physics Letters;2024-06-03

3. Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability;IEEE Electron Device Letters;2024-05

4. Planar Implantation Edge Termination for Vertical GaN Power Devices;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04