Robust Avalanche in 1.7 kV Vertical GaN Diodes With a Single-Implant Bevel Edge Termination-Reference-Cited by-同舟云学术

Robust Avalanche in 1.7 kV Vertical GaN Diodes With a Single-Implant Bevel Edge Termination

Published:2023-10 Issue:10 Volume:44 Page:1616-1619
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Xiao Ming¹^ORCID,Wang Yifan¹^ORCID,Zhang Ruizhe¹^ORCID,Song Qihao¹^ORCID,Porter Matthew¹^ORCID,Carlson Eric²,Cheng Kai³,Ngo Khai³^ORCID,Zhang Yuhao¹^ORCID

Affiliation:

1. Center of Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA

2. Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA

3. Enkris Semiconductor Inc., Suzhou, China

Funder

Center for Power Electronics Systems Industry Consortium, National Science Foundation

Advanced Research Projects Agency-Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/55/10265125/10217061-aam.pdf

Reference32 articles.

1. Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2

2. Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings

3. High Voltage Vertical GaN p-n Diodes With Avalanche Capability

4. Vertical GaN Power Diodes With a Bilayer Edge Termination

5. Role of stable and metastable Mg–H complexes in p-type GaN for cw blue laser diodes

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