Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings-Reference-Cited by-同舟云学术

Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings

Published:2021-06-24 Issue:7 Volume:14 Page:074002
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Matys Maciej,Ishida Takashi,Nam Kyung Pil,Sakurai Hideki^ORCID,Kataoka Keita^ORCID,Narita Tetsuo^ORCID,Uesugi Tsutomu,Bockowski Michal^ORCID,Nishimura Tomoaki,Suda Jun^ORCID,Kachi Tetsu^ORCID

Funder

Polish National Science Centre project

MEXT "Research and development of next-generation semiconductor to realize energy-saving society"

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/ac0b09/pdf

Reference31 articles.

1. 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

2. 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

3. Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process

4. The 2018 GaN power electronics roadmap

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