Monolithic 3D integration of logic and memory: Carbon nanotube FETs, resistive RAM, and silicon FETs-Reference-Cited by-同舟云学术

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Monolithic 3D integration of logic and memory: Carbon nanotube FETs, resistive RAM, and silicon FETs

Published:2014-12 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Electron Devices Meeting
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Author:

Shulaker Max M.,Wu Tony F.,Pal Asish,Zhao Liang,Nishi Yoshio,Saraswat Krishna,Wong H.-S. Philip,Mitra Subhasish

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7038718/7046955/07047120.pdf?arnumber=7047120

Cited by 83 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Monolithic 3D Integration using BEOL FeFET: Reliability, Thermal Effects, and DNN Accuracy;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

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