Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond-Reference-Cited by-同舟云学术

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Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond

Published:2013-12 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Electron Devices Meeting
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Author:

Bangsaruntip S.,Balakrishnan K.,Cheng S.-L.,Chang J.,Brink M.,Lauer I.,Bruce R. L.,Engelmann S. U.,Pyzyna A.,Cohen G. M.,Gignac L. M.,Breslin C. M.,Newbury J. S.,Klaus D. P.,Majumdar A.,Sleight J. W.,Guillorn M. A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724667.pdf?arnumber=6724667

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