Experimental study on hole and electron effective masses in inversion layers of Ge (100), (110) and (111) p- and n-MOSFETs-Reference-Cited by-同舟云学术

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Experimental study on hole and electron effective masses in inversion layers of Ge (100), (110) and (111) p- and n-MOSFETs

Published:2016-12 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Electron Devices Meeting (IEDM)
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Author:

Zhang R.,Li J.,Zheng Z.,Yu X.,Dong W.,Zhao Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838405.pdf?arnumber=7838405

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atom-Scaled Hafnium Doping for Strengthening the Germanium Oxide Interfacial Layer of The Gate Stack of Germanium P-Type Metal-Oxide-Semiconductor Field Effect Transistor;ECS Journal of Solid State Science and Technology;2024-05-01

2. Tunable EOT Scaling Down to 0.55 nm for HfO₂-Based Gate-Stacks on Ge Substrate by In Situ H₂ Plasma Treatment;ECS Journal of Solid State Science and Technology;2024-05-01

3. Impact of post metallization annealing (PMA) on the electrical properties of Ge nMOSFETs with ZrO2 dielectric;Solid-State Electronics;2022-04

4. Notable difference between rapid-thermal and microwave annealing on Ge pMOSFETs;Surface and Coatings Technology;2021-09

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