Author:
Chou Lulu,Yu Xiao,Liu Yan,Xu Yang,Peng Yue,Liu Huan,Han Genquan,Hao Yue
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference39 articles.
1. Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, k∼43, ∼ 2 × 10^-3 A/cm2 gate leakage, SS = 85 mV/dec , Ion/Ioff = 6 × 105 , and high strain response;Lin,2012
2. High-mobility Ge p- and n-MOSFETs with 0.7-nm EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma postoxidation;Zhang;IEEE Trans Electron Devices,2013
3. High-mobility Ge pMOSFETs with crystalline ZrO2 dielectric;Liu;IEEE Electron Device Lett,2019
4. Aggressive EOT Scaling of Ge pMOSFETs with HfO2/AlOx/GeOx Gate-Stacks Fabricated by Ozone Postoxidation;Zhang;IEEE Electron Device Lett,2016
5. High performance Ge pMOSFETs With HfO2/Hf-Cap/GeOx gate stack and suitable post metal annealing treatments;Yi;IEEE Electron Device Lett,2017
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