Energy efficiency comparison of nanowire heterojunction TFET and Si MOSFET at L<inf>g</inf>=13nm, including P-TFET and variation considerations-Reference-Cited by-同舟云学术

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Energy efficiency comparison of nanowire heterojunction TFET and Si MOSFET at Lg=13nm, including P-TFET and variation considerations

Published:2013-12 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Electron Devices Meeting
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Author:

Avci Uygar E.,Morris Daniel H.,Hasan Sayed,Kotlyar Roza,Kim Raseong,Rios Rafael,Nikonov Dmitri E.,Young Ian A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724744.pdf?arnumber=6724744

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance;Semiconductor Science and Technology;2024-08-07

2. Demonstration of a Frequency Doubler Using a Tunnel Field-Effect Transistor with Dual Pocket Doping;Electronics;2023-12-08

3. Current Status and Future Perspectives of Tunnel Field Effect Transistors for Low Power Switching Applications;Lecture Notes in Electrical Engineering;2023-09-03

4. Tunnel Field-Effect Transistor: Impact of the Asymmetric and Symmetric Ambipolarity on Fault and Performance in Digital Circuits;Journal of Low Power Electronics and Applications;2022-10-31

5. Implementation and Performance Analysis of Low Power 1 GHz 4-Bit Flash ADC Using III–V Tunnel-FET;Circuits, Systems, and Signal Processing;2022-09-28

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