Abstract
Tunnel Field-Effect Transistors (TFETs) have been considered one of the most promising technologies to complement or replace CMOS for ultra-low-power applications, thanks to their subthreshold slope below the well-known limit of 60 mV/dec at room temperature holding for the MOSFET technologies. Nevertheless, TFET technology still suffers of ambipolar conduction, limiting its applicability in digital systems. In this work, we analyze through SPICE simulations, the impact of the symmetric and asymmetric ambipolarity in failure and power consumption for TFET-based complementary logic circuits. Our results clarify the circuit-level effects induced by the ambipolarity feature, demonstrating that it affects the correct functioning of logic gates and strongly impacts power consumption. We believe that our outcomes motivate further research towards technological solutions for ambipolarity suppression in TFET technology for near-future ultra-low-power applications.
Subject
Electrical and Electronic Engineering
Reference37 articles.
1. Taur, Y., and Ning, T.H. Fundamentals of Modern VLSI Devices, 2009.
2. Roy, K., and Prasad, S. Low-Power Cmos Vlsi Circuit Design, 2009.
3. Shafique, M., Garg, S., Henkel, J., and Marculescu, D. The EDA Challenges in the Dark Silicon Era: Temperature, Reliability, and Variability Perspectives. Proceedings of the 51st Annual Design Automation Conference, 2014.
4. Tunnel field-effect transistors as energy-efficient electronic switches;Ionescu;Nature,2011
5. Low-Voltage Tunnel Transistors for Beyond CMOS Logic;Seabaugh;Proc. IEEE,2010