Ultra high density 3D via RRAM in pure 28nm CMOS process-Reference-Cited by-同舟云学术

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Ultra high density 3D via RRAM in pure 28nm CMOS process

Published:2013-12 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Electron Devices Meeting
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Author:

Hsieh Min-Che,Liao Yu-Cheng,Chin Yung-Wen,Lien Chen-Hsin,Chang Tzong-Sheng,Chih Yue-Der,Natarajan Sreedhar,Tsai Ming-Jinn,King Ya-Chin,Lin Chrong Jung

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724600.pdf?arnumber=6724600

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Programmable mixed-signal circuits;SN Applied Sciences;2023-11-16

2. Towards a CMOS-Process-Portable ReRAM PDK;2023 21st IEEE Interregional NEWCAS Conference (NEWCAS);2023-06-26

3. An RRAM-Based Digital Computing-in-Memory Macro With Dynamic Voltage Sense Amplifier and Sparse-Aware Approximate Adder Tree;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-02

4. Low energy non-volatile look-up table using 2 bit ReRAM for field programmable gate array;Semiconductor Science and Technology;2022-05-05

5. Analog Computation with RRAM and Supporting Circuits;Analog Circuits for Machine Learning, Current/Voltage/Temperature Sensors, and High-speed Communication;2022

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