Understanding of the endurance failure in scaled HfO<inf>2</inf>-based 1T1R RRAM through vacancy mobility degradation-Reference-Cited by-同舟云学术

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Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation

Published:2012-12 Issue: Volume: Page:
ISSN:
Container-title:2012 International Electron Devices Meeting
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Author:

Chen Yang Yin,Degraeve Robin,Clima Sergiu,Govoreanu Bogdan,Goux Ludovic,Fantini Andrea,Kar Gouri Sankar,Pourtois Geoffrey,Groeseneken Guido,Wouters Dirk J.,Jurczak Malgorzata

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6471855/6478950/06479079.pdf?arnumber=6479079

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Heterogeneous Integration of Precise and Approximate Storage for Error-Tolerant Workloads;IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences;2023-03-01

4. Failure Analysis of 65nm CMOS Integrated Nanoscale ReRAM Devices on a 300mm Wafer Platform;2022 IEEE International Integrated Reliability Workshop (IIRW);2022-10-09

5. Electron irradiation-induced defects for reliability improvement in monolayer MoS2-based conductive-point memory devices;npj 2D Materials and Applications;2022-05-09

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