RFAM: RESET-Failure-Aware-Model for HfO2-based Memristor to Enhance the Reliability of Neuromorphic Design-Reference-Cited by-同舟云学术

RFAM: RESET-Failure-Aware-Model for HfO2-based Memristor to Enhance the Reliability of Neuromorphic Design

Published:2023-06-05 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the Great Lakes Symposium on VLSI 2023
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Author:

Das Hritom¹^ORCID,Rathore Manu¹^ORCID,Febbo Rocco¹^ORCID,Liehr Maximilian²^ORCID,Cady Nathaniel C.²^ORCID,Rose Garrett S.¹^ORCID

Affiliation:

1. The University of Tennessee, Knoxville, Knoxville, TN, USA

2. The University of Tennessee, Knoxville, Albany, NY, USA

Funder

Air Force Research Laboratory

Publisher

ACM

Link

https://dl.acm.org/doi/pdf/10.1145/3583781.3590211

Reference16 articles.

1. Sherif Amer. 2019. Device Modeling and Circuit Design of Neuromorphic Memory Structures. (2019). Sherif Amer. 2019. Device Modeling and Circuit Design of Neuromorphic Memory Structures. (2019).

2. A practical hafnium-oxide memristor model suitable for circuit design and simulation

3. Voltage-Controlled Cycling Endurance of HfO_x-Based Resistive-Switching Memory

4. Rotem Ben Hur , Nimrod Wald , Nishil Talati , and Shahar Kvatinsky . 2017 . Simple magic: Synthesis and in-memory Mapping of logic execution for memristoraided logic . In 2017 IEEE/ACM International Conference on Computer-Aided Design (ICCAD). 225--232 . https://doi.org/10.1109/ICCAD.2017.8203782 10.1109/ICCAD.2017.8203782 Rotem Ben Hur, Nimrod Wald, Nishil Talati, and Shahar Kvatinsky. 2017. Simple magic: Synthesis and in-memory Mapping of logic execution for memristoraided logic. In 2017 IEEE/ACM International Conference on Computer-Aided Design (ICCAD). 225--232. https://doi.org/10.1109/ICCAD.2017.8203782

5. TS Böscke , J Müller , D Bräuhaus , U Schröder , and U Böttger . 2011 . Int. Electron Devices Meeting. TS Böscke, J Müller, D Bräuhaus, U Schröder, and U Böttger. 2011. Int. Electron Devices Meeting.

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