A practical hafnium-oxide memristor model suitable for circuit design and simulation-Reference-Cited by-同舟云学术

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A practical hafnium-oxide memristor model suitable for circuit design and simulation

Published:2017-05 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE International Symposium on Circuits and Systems (ISCAS)
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Author:

Amer Sherif,Sayyaparaju Sagarvarma,Rose Garrett S.,Beckmann Karsten,Cady Nathaniel C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8014728/8049747/08050790.pdf?arnumber=8050790

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