Resistive Switching Transparent SnO2 Thin Film Sensitive to Light and Humidity

Abstract

Abstract Designing and manufacturing memristor devices with simple and cheap methods is very promising for its development. Here, an Ag/SnO2 /FTO(F-SnO2) structure is used through the deposition of the SnO2 layer attained by its sol via the air-brush method on an FTO substrate. This structure was investigated in terms of the memristive characteristics. The Negative differential resistance(NDR) effect was also observed in environment humidity conditions. In this structure, we have valance change memory (VCM) and electrometalization change memory (ECM) mechanisms that cause the current peak in the NDR region by forming an OH− conductive filament(CF). In addition, the photoconductivity effect has been found under light illumination and this structure shows the positive photoconductance (PPC) effect by increasing the conductivity. This effect has the highest value at wavelengths close to the absorption wavelength of SnO2 (~ 340 nm). Also, the device was examined for up to 100 cycles and significant stability was observed. This behavior is a valuable advantage because the stability of memristors is critical for their use in neuromorphic computing. The coexistence of the NDR effect and resistive switching (RS) memory behavior is useful for achieving high-level simulations of biomimetic or neuromorphic computing. This combination can lead to the creation of artificial synapses that can mimic the behavior of biological synapses.