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Promising memristive behavior in MoS2–MoO2–MoO3 scalable composite thin films

  • Published:2020-09 Issue: Volume:835 Page:155291
  • ISSN:0925-8388
  • Container-title:Journal of Alloys and Compounds
  • language:en
  • Short-container-title:Journal of Alloys and Compounds

Author:

Jamilpanah Loghman,Khademi Iman,Shoa e Gharehbagh Javad,Aziz Mohseni Sina,Mohseni Seyed Majid

Funder

Iran Nanotechnology Initiative Council

National Elites Foundation

INEF

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference50 articles.

1. Atomic structure of conducting nanofilaments in TiO2resistive switching memory;Kwon;Nat. Nanotechnol.,2010

2. Very low-programming-current RRAM with self-rectifying characteristics;Zhou;IEEE Electron. Device Lett.,2016

3. Sub-nanosecond switching of a tantalum oxide memristor;Torrezan;Nanotechnology,2011

4. Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension;Xin;Nat. Nanotechnol.,2018

5. Nanobatteries in redox-based resistive switches require extension of memristor theory;Valov;Nat. Commun.,2013
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