Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838388.pdf?arnumber=7838388
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4. 545-mA/mm E-Mode Recessed-Gate GaN MOSHEMT (Vth > 4 V) by Ion Beam Etching;IEEE Electron Device Letters;2024-06
5. The Effect of Fluorine Doping in the Charge Trapping Layer on Device Characteristics and Reliability of E-Mode GaN MIS-HEMTs;IEEE Transactions on Electron Devices;2024-06
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