Single suspended InGaAs nanowire MOSFETs-Reference-Cited by-同舟云学术

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Single suspended InGaAs nanowire MOSFETs

Published:2015-12 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Electron Devices Meeting (IEDM)
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Author:

Zota Cezar B.,Wernersson Lars-Erik,Lind Erik

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7402013/7409598/07409808.pdf?arnumber=7409808

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Characteristics of In_0.53Ga_0.47As Gate-All-Around MOSFETs With Different Nanowire Shapes;IEEE Transactions on Electron Devices;2022-08

2. Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability;IEEE Journal of the Electron Devices Society;2022

3. Simulation of low-noise amplifier with quantized ballistic nanowire channel;Semiconductor Science and Technology;2020-10-13

4. Regrown source/drain in InGaAs multi-gate MOSFETs;Journal of Crystal Growth;2019-09

5. III-V Devices and Technology for CMOS;High Mobility Materials for CMOS Applications;2018

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