Regrown source/drain in InGaAs multi-gate MOSFETs
Author:
Funder
MEXT
JSPS
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. J.A. del Alamo, D.A. Antoniadis, J. Lin, W. Lu, A. Vardi, X. Zhao, III-V MOSFETs for Future CMOS, in: IEEE Compound Semiconductor IC Symp., 2015.
2. M.V. Fischetti, L. Wang, B. Yu, C. Sachs, P.M. Asbeck, Y. Taur, M. Rodwell, Simulation of Electron Transport in High-Mobility MOSFETs: Density of States Bottleneck and Source Starvation, IEDM 2007, p. 109.
3. Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As;Lind;J. Vac. Sci. Technol.,2015
4. M. Rodwell, E. Lind, Z. Griffith, S.R. Bank, A.M. Crook, U. Singisetti, M. Wistey, G. Burek, A.C. Gossard, Frequency limits of InP-based integrated circuits, in: Inter. Conf. on Indium Phosphide and Related (IPRM), 2007, PL-3.
5. Y. Yonai, T. Kanazawa, S. Ikeda, Y. Miyamoto, High drain current (>2 A/mm) InGaAs channel MOSFET at VD = 0.5 V with shrinkage of channel length by InP anisotropic etching, IEDM, 2011, p. 307.
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaAsSb/InGaAs tunnel FETs using thick SiO2 mask for regrowth;Japanese Journal of Applied Physics;2024-03-01
2. Al2O3/InGaAs interface passivation by fluorine-containing anodic layers;Journal of Applied Physics;2022-02-28
3. High Performance and Reliability Analysis of Implant Free Composite Channel In0.53Ga0.47As/InAs/In0.53Ga0.47As Delta-Doped MOSFET;Iranian Journal of Science and Technology, Transactions of Electrical Engineering;2020-11-11
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