Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5 GHz applications.
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4456902/4463396/04463430.pdf?arnumber=4463430
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Applicability of Channel Doping Gradient in the Design of a Short Channel (0.1 µm) LDMOS Transistor for Integrated Power and RF Applications;Transactions on Electrical and Electronic Materials;2024-04-04
2. Device-Circuit Co-Design and ESD/HCI Reliability Aware Design of Field Plated RF LDMOS Devices;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11
3. A 2 kW S-band RF source for multipactor research utilizing GaN HEMTs;AIP Advances;2020-09-01
4. A Silicon on Nothing LDMOS with Two Air Pillars in Gate Insulator for Power Applications;Silicon;2020-01-02
5. Ruggedness Characterization of Bonding Wire Arrays in LDMOSFET-Based Power Amplifiers;IEEE Transactions on Components, Packaging and Manufacturing Technology;2018-06
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