Ruggedness Characterization of Bonding Wire Arrays in LDMOSFET-Based Power Amplifiers

Author:

Lin Liang,Hua Yu-Jie,Zhou LiangORCID,Wu Qi,Mao JunfaORCID,Yin Wen-YanORCID

Funder

NSFC

NSAF

Shanghai Science and Technology Commission

Science Challenge Project

Alexander von Humboldt Research Fellowship of Germany

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Electrothermal Responses of Bonding Wire Arrays in GaN Power Amplifier;IEEE Access;2023

2. Investigation on harmonic spur characteristics of hybrid integrated LDMOS and AlGaN / GaN power amplifiers at different temperatures;International Journal of RF and Microwave Computer-Aided Engineering;2020-06-30

3. High-Power Wire Bonded GaN Rectifier for Wireless Power Transmission;IEEE Access;2020

4. Optimization Design of Fixed-Length Bond-Wire Interconnection in Multichips Module;IEEE Transactions on Components, Packaging and Manufacturing Technology;2019-11

5. Study on Harmonic Spur Characteristics of AlGaN/GaN HEMT PA at Different Temperatures;2019 12th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo);2019-10

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