Investigation on harmonic spur characteristics of hybrid integrated LDMOS and AlGaN / GaN power amplifiers at different temperatures-Reference-Cited by-同舟云学术

Investigation on harmonic spur characteristics of hybrid integrated LDMOS and AlGaN / GaN power amplifiers at different temperatures

Published:2020-06-30 Issue:9 Volume:30 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Microw Comput Aided Eng

Author:

Wang Ruizhen¹^ORCID,Yang Xing²,Zhou Liang³,Xie Hao¹,Wang Dawei⁴,Yin Wen‐Yan¹

Affiliation:

1. Innovative Institute of Electromagnetic Information and Electronic Integration, College of Information Science and Electronic EngineeringZhejiang University Hangzhou China

2. State Key Laboratory of Pulsed Power Laser Technology, Electronic Countermeasure InstituteNational University of Defense Technology Hefei China

3. Center for Microwave and RF Technologies, Key Laboratory of Ministry of Education of Design and EMC of High‐Speed Electronic SystemsShanghai Jiao Tong University Shanghai China

4. Engineering Research Center of Smart Microsensors and Microsystems of MOE, School of Electronics and InformationHangzhou Dianzi University Hangzhou China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mmce.22345

Reference39 articles.

1. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

2. GaN Takes the Lead

3. Efficient Multisignal 2–4-GHz Power Amplifier With Power Tracking

4. A High-Efficiency GaN Doherty Power Amplifier With Blended Class-EF Mode and Load-Pull Technique

5. Wideband High-Efficiency Power Amplifier Using D/CRLH Bandpass Filtering Matching Topology