Device-Circuit Co-Design and ESD/HCI Reliability Aware Design of Field Plated RF LDMOS Devices-Reference-Cited by-同舟云学术

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Device-Circuit Co-Design and ESD/HCI Reliability Aware Design of Field Plated RF LDMOS Devices

Published:2022-12-11 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Conference on Emerging Electronics (ICEE)
language:
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Author:

Variar Harsha B¹,Singh Ajay¹,Somayaji Jhnanesh¹,Shrivastava Mayank¹

Affiliation:

1. Electronic Systems Engineering Indian Institute of Science,Bangalore,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117590/10117577/10118172.pdf?arnumber=10118172

Reference29 articles.

1. Modeling and Characterization of RF and Microwave Power FETs

2. Rf driven plasma lighting: the next revolution in light sources;werner;Microwave Journal,2010

3. 50vrfldmos: An ideal rf power technology for ism, broadcast, and radar applications;piel;Freescale Seminconduct Tempe AZ,2011

4. High Voltage RF LDMOS Technology for Broadcast Applications

5. The new power brokers: high voltage rf devices;pengelly;Microwave Journal,2009

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