Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation-Reference-Cited by-同舟云学术

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Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation

Published:1991-04 Issue:4 Volume:12 Page:181-183
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wu I.-W.,Huang T.-Y.,Jackson W.B.,Lewis A.G.,Chiang A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/2525/00075757.pdf?arnumber=75757

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