Impact of Nanosheet Thickness on Performance and Reliability of Polycrystalline-Silicon Thin-Film Transistors With Double-Gate Operation-Reference-Cited by-同舟云学术

Impact of Nanosheet Thickness on Performance and Reliability of Polycrystalline-Silicon Thin-Film Transistors With Double-Gate Operation

Published:2023 Issue: Volume:22 Page:740-746
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Ma William Cheng-Yu¹^ORCID,Su Chun-Jung²^ORCID,Kao Kuo-Hsing³^ORCID,Guo Jing-Qiang⁴,Wu Cheng-Jun⁴,Wu Po-Ying⁴,Hung Jia-Yuan⁴

Affiliation:

1. Department of Electrical Engineering and College of Semiconductor and Advanced Technology Research, National Sun Yat-sen University, Kaohsiung, Taiwan

2. Department of Electrophysics, National Yang Ming Chiao Tung University, Taiwan

3. Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan

4. Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan

Funder

National Science and Technology Council, Taiwan

Taiwan Semiconductor Research Institute

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx7/7729/10016255/10293254.pdf?arnumber=10293254

Reference33 articles.

1. High Performance Dual Gate Blue Laser Annealed Poly-Si Thin-Film Transistor for High-Resolution Displays

2. Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect

3. High-Performance Short-Channel Double-Gate Low-Temperature Polysilicon Thin-Film Transistors Using Excimer Laser Crystallization

4. Origins of Performance Enhancement in Independent Double-Gated Poly-Si Nanowire Devices

5. Reliability Mechanisms of LTPS-TFT With $\hbox{HfO}_{2}$ Gate Dielectric: PBTI, NBTI, and Hot-Carrier Stress

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