High Temperature Characteristics of Piezoresistive Silicon Carbide Pressure Sensors Implemented by Leadless Packaging
Author:
Affiliation:
1. Xi'an Jiaotong University,State Key Laboratory for Manufacturing Systems Engineering,Xi'an,China,710049
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10324456/10324848/10324974.pdf?arnumber=10324974
Reference14 articles.
1. Two-step femtosecond laser etching for bulk micromachining of 4H–SiC membrane applied in pressure sensing
2. Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching
3. Application of femtosecond laser etching in the fabrication of bulk SiC accelerometer
4. Application of femtosecond laser micromachining in silicon carbide deep etching for fabricating sensitive diaphragm of high temperature pressure sensor
5. Design and Fabrication of Bulk Micromachined 4H-SiC Piezoresistive Pressure Chips Based on Femtosecond Laser Technology
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