Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching-Reference-Cited by-同舟云学术

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Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching

Published:2021-04-25 Issue: Volume: Page:
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Container-title:2021 IEEE 16th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
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Author:

Wang Lukang,Zhao You,Zhao Yulong,Yang Yu,Li Bo,Gong Taobo

Funder

National Key R&D Program of China

Key Research and Development Projects of Shaanxi Province

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9451202/9451223/09451358.pdf?arnumber=9451358

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Review of Femtosecond Laser Processing of Silicon Carbide;Micromachines;2024-05-10

2. Application of bulk silicon carbide technology in high temperature MEMS sensors;Materials Science in Semiconductor Processing;2024-04

3. High Temperature Characteristics of Piezoresistive Silicon Carbide Pressure Sensors Implemented by Leadless Packaging;2023 IEEE SENSORS;2023-10-29

4. Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser;Micromachines;2022-08-11

5. Piezoresistive 4H-SiC Pressure Sensor With Diaphragm Realized by Femtosecond Laser;IEEE Sensors Journal;2022-06-15

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