Hole confinement MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructures-Reference-Cited by-同舟云学术

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Hole confinement MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructures

Published:1991-05 Issue:5 Volume:12 Page:230-232
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Garone P.M.,Venkataraman V.,Sturni J.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/2604/00079566.pdf?arnumber=79566

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