Author:
Inagaki Mitsuhoro,Matsumoto Satoru
Abstract
A plateau observed in the quasi-static C-V (QSCV) curve of MOS capacitors on the strained Si/relaxed SiGe epitaxial wafers was used as a quantitative estimation of the strain. There is a linear relationship between the strength of plateau and the Raman shift of Si-Si 520.0 cm-1. It suggests that plateau in C-V curve can be used as a quantitative index of the strained Si/SiGe heterostructures.
Publisher
The Electrochemical Society
Cited by
1 articles.
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