Author:
Khare P.,Schroder D.,Sampson R.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. Germanium–silicon strained layers and heterostructures;Jain,1994
2. Applications of silicon–germanium heterostructure devices;Maiti,2001
3. “SiGe HBTs for applications in BiCMOS technology: I. Stability, reliability and material parameters;Jain;Semicond Sci Technol,2001
4. Current status and future trends of SiGe BiCMOS technology;Harame;IEEE Trans Electron Dev,2001
5. A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors;Ghani;IEDM Tech Dig,2003
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献