SiGe HBTs for application in BiCMOS technology: I. Stability, reliability and material parameters-Reference-Cited by-同舟云学术

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SiGe HBTs for application in BiCMOS technology: I. Stability, reliability and material parameters

Published:2001-05-03 Issue:6 Volume:16 Page:R51-R65
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Jain S C,Decoutere S,Willander M,Maes H E

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference78 articles.

1. SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

2. Strained layer crystalline undulator;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-11

3. Dislocations Accelerate Oxygen Ion Diffusion in La0.8Sr0.2MnO3 Epitaxial Thin Films;ACS Nano;2017-10-16

4. Strain in Si or Ge from the Edge Forces of Epitaxial Nanostructures;Nanoscience and Nanotechnology Letters;2017-07-01

5. A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT;Chinese Physics B;2016-11-29

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