1. CK Maiti & G A Armstrong, Applications of Silicon-Germanium Heterostructure Devices,Bristol: Inst of Physics Publishing, UK, 2001.
2. C K Maiti, N B Chakrabarti & S K Ray, Strained silicon heterostructures: materials and devices,IEE, UK, 2001.
3. D Harame, D Nguyen-Ngoc, K Stern, L Larson, M Case, S Kovacic, S Voinigescu, J Cressler, T Tewksburg, R , Gorves, E Eld, D Sunderland, D Rensch, S Jeng, J Malinowski, M Gilbert, K Schonenberg, D Ahlgren and B Meyerson, SiGe HBT Technology: Device and Application Issues, inIEEE IEDM Tech Dig, pp 731–734, 1995.
4. J J Welser, The application of strained-silicon/relaxed-silicon germanium heterostructures to metal-oxide-semiconductor field-effect transistors.PhD thesis, Stanford University, 1994.