Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs-Reference-Cited by-同舟云学术

Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

Published:2023-07 Issue:7 Volume:44 Page:1036-1039
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chung Hao-Tung¹^ORCID,Pan Yu-Ming²,Lin Nein-Chih³,Hong Zhong-Jie²,Shih Bo-Jheng²^ORCID,Yang Chih-Chao³,Shen Chang-Hong³,Huang Po-Tsang²^ORCID,Cheng Huang-Chung¹,Chen Kuan-Neng¹^ORCID,Hu Chenming²^ORCID

Affiliation:

1. Department of Electronics Engineering, Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

3. National Applied Research Laboratories, Taiwan Semiconductor Research Institute, Hsinchu, Taiwan

Funder

The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education

National Science and Technology Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10168002/10123089.pdf?arnumber=10123089

Reference22 articles.

1. Superlateral growth of a-Ge film by excimer laser annealing

2. 300 mm heterogeneous 3D integration of record performance layer transfer germanium PMOS with silicon NMOS for low power high performance logic applications;rachmady;IEDM Tech Dig,2019

3. Heteroepitaxy of Ge on Si(001) with pits and windows transferred from free-standing porous alumina mask

4. High-performance p-channel thin-film transistors with lightly doped n-type excimer-laser-crystallized germanium films

5. Modeling and characterization of polycrystalline-silicon thin-film transistors with a channel-length comparable to a grain size

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