Modeling and characterization of polycrystalline-silicon thin-film transistors with a channel-length comparable to a grain size
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1319322
Reference16 articles.
1. A C-switch cell for low-voltage and high-density SRAMs
2. New excimer‐laser‐crystallization method for producing large‐grained and grain boundary‐location‐controlled Si films for thin film transistors
3. Polycrystalline silicon thin film transistors on Corning 7059 glass substrates using short time, low‐temperature processing
4. Controlled two-step solid-phase crystallization for high-performance polysilicon TFT's
5. High-performance thin-film transistors fabricated using excimer laser processing and grain engineering
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