Effects of the grain boundary protrusion position on the off-state current of polycrystalline silicon thin-film transistors-Reference-Cited by-同舟云学术

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Effects of the grain boundary protrusion position on the off-state current of polycrystalline silicon thin-film transistors

Published:2021-03-09 Issue:3 Volume:22 Page:153-162
ISSN:1598-0316
Container-title:Journal of Information Display
language:en
Short-container-title:Journal of Information Display

Author:

Yang JooWon¹,Kim Yong-Sang²,Jeon Jae-Hong³,Park KeeChan¹

Affiliation:

1. School of Electrical and Electronics Engineering, Konkuk University, Seoul, Korea

2. Department of Electrical & Computer Engineering, Sungkyunkwan University, Suwon, Korea

3. School of Electronics and Information Engineering, Korea Aerospace University, Goyang, Korea

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/15980316.2021.1896587

Reference15 articles.

1. Novel LTPS technology for large substrate

2. 16.2: World-Best Performance LTPS TFTs with Robust Bending Properties on AMOLED Displays

3. 59.1: Invited Paper: LTPS Backplane Technologies for AMLCDs and AMOLEDs

4. Anomalous off-current mechanisms in N-channel poly-Si thin film transistors

5. Investigation on anomalous leakage currents in poly-TFTs including dynamic effects

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduction of short-time image sticking in organic light-emitting diode display through transient analysis of low-temperature polycrystalline silicon thin-film transistor;Displays;2024-09

2. Study of Electrical Characteristics for Dual-Gate TFTs With Asymmetric Defect Distributions and Gate Work Functions;IEEE Transactions on Electron Devices;2023-06

3. Electrical-performance and reliability improvement of flexible low-temperature polycrystalline silicon thin-film transistors via post-annealing process;Semiconductor Science and Technology;2022-08-19

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