Study of Electrical Characteristics for Dual-Gate TFTs With Asymmetric Defect Distributions and Gate Work Functions-Reference-Cited by-同舟云学术

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Study of Electrical Characteristics for Dual-Gate TFTs With Asymmetric Defect Distributions and Gate Work Functions

Published:2023-06 Issue:6 Volume:70 Page:3390-3393
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hsu Chih-Chieh¹^ORCID,Li Jin-Xian¹,Huang Po-Cheng¹,Jhang Wun-Ciang¹^ORCID,Joodaki Mojtaba²^ORCID

Affiliation:

1. Graduate School of Engineering Science and Technology and the Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Yunlin, Taiwan

2. School of Computer Science and Engineering, Constructor University, Bremen, Germany

Funder

Ministry of Science and Technology of Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10136238/10114631.pdf?arnumber=10114631

Reference14 articles.

1. Effects of Parasitic Source/Drain Field Plates on Performances of Channel-Passivated Amorphous InGaZnO Thin-Film Transistors

2. An Enhancement-Mode Hydrogen-Terminated Diamond Field-Effect Transistor With Lanthanum Hexaboride Gate Material

3. Performance dependence of self-aligned dual-gate poly-Si TFTs on localized defective regions

4. Drain bias and position dependent performance degradation of dual-gate poly-Si TFTs with undoped region offsets

5. Effects of the grain boundary protrusion position on the off-state current of polycrystalline silicon thin-film transistors

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