High-performance p-channel thin-film transistors with lightly doped n-type excimer-laser-crystallized germanium films-Reference-Cited by-同舟云学术

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High-performance p-channel thin-film transistors with lightly doped n-type excimer-laser-crystallized germanium films

Published:2017-05-08 Issue:6S1 Volume:56 Page:06GF08
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liao Chan-Yu,Huang Ching-Yu,Huang Ming-Hui,Huang Wen-Hsien,Shen Chang-Hong,Shieh Jia-Min,Cheng Huang-Chung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=6S1/a=06GF08/pdf

Reference34 articles.

1. 3-D ICs: Motivation, performance analysis, technology and applications

2. Optimization of Germanium (Ge) $\hbox{n}^{+}/\hbox{p}$ and $\hbox{p}^{+}/\hbox{n}$ Junction Diodes and Sub 380 $^{\circ}\hbox{C}$ Ge CMOS Technology for Monolithic Three-Dimensional Integration

3. A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate

4. Germanium for advanced CMOS anno 2009: a SWOT analysis

5. Low temperature (≤ 380°C) and high performance Ge CMOS technology with novel source/drain by metal-induced dopants activation and high-k/metal gate stack for monolithic 3D integration

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of extremely thin polycrystalline germanium films and their TFT performance fabricated at 400 °C by Cu-induced crystallization on a glass substrate;Japanese Journal of Applied Physics;2024-05-01

2. Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs;IEEE Electron Device Letters;2023-07

3. High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs;IEEE Journal of the Electron Devices Society;2023

4. Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators;Japanese Journal of Applied Physics;2021-12-27

5. Solution-based coating and printing of polycrystalline Ge films using GeO2 solution by moderate-pressure hydrogen plasma reduction;Flexible and Printed Electronics;2021-08-02

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