Fast Switching NO₂-Doped p-Channel Diamond MOSFETs
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, Saga University, Saga, Japan
2. Orbray Company Ltd., Tokyo, Japan
Funder
Japan Society for the Promotion of Science Grants-in-aid for Scientific Research
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10109212/10081089.pdf?arnumber=10081089
Reference27 articles.
1. Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al2O3Passivation Layer
2. Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al$_{2}$O$_{3}$ Overlayer and its Electric Properties
3. 875-MW/cm² Low-Resistance NO₂ p-Type Doped Chemical Mechanical Planarized Diamond MOSFETs
4. Thermally Stable Operation of H-Terminated Diamond FETs by $\hbox{NO}_{2}$ Adsorption and $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation
5. Effect of surface roughness and H–termination chemistry on diamond's semiconducting surface conductance
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dynamic switching operation of diamond MOSFETs with NO2 p-type doping and Al2O3 gate insulation and passivation;Journal of Vacuum Science & Technology B;2024-08-26
2. Low-power and high-speed HfLaO-based FE-TFTs for artificial synapse and reconfigurable logic applications;Materials Horizons;2024
3. Stable AC Stress Operation (100 h) of NO2 p-Type Doped Diamond MOSFETs;IEEE Electron Device Letters;2023-10
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