Dynamic switching operation of diamond MOSFETs with NO2 p-type doping and Al2O3 gate insulation and passivation
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, Saga University 1 , Saga 840-8502, Japan
2. National Institute of Technology, Kure College 2 , Hiroshima 737-8506, Japan
Abstract
Funder
Japan Society for the Promotion of Science
Publisher
American Vacuum Society
Link
https://pubs.aip.org/avs/jvb/article-pdf/doi/10.1116/5.0218780/20129419/052207_1_5.0218780.pdf
Reference18 articles.
1. Growth of Device-Quality Homoepitaxial Diamond Thin Films
2. Diamond as an electronic material
3. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
4. The measurement of thermal properties of diamond
5. Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz
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