Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al$_{2}$O$_{3}$ Overlayer and its Electric Properties
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/5/i=2/a=025701/pdf
Reference27 articles.
1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
2. Electron effective masses and lattice scattering in natural diamond
3. Hole-drift velocity in natural diamond
4. Formation Mechanism of p-Type Surface Conductive Layer on Deposited Diamond Films
5. Origin of Surface Conductivity in Diamond
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