875-MW/cm² Low-Resistance NO₂ p-Type Doped Chemical Mechanical Planarized Diamond MOSFETs
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, Saga University, Saga, Japan
2. Adamant Namiki Precision Jewel Company, Ltd., Tokyo, Japan
Funder
Japan Society for the Promotion of Science (JSPS) Grants-in-aid for Scientific Research
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9762988/09749065.pdf?arnumber=9749065
Reference22 articles.
1. Electronic and surface properties of H-terminated diamond surface affected by NO2 gas
2. Effect of surface roughness and H–termination chemistry on diamond's semiconducting surface conductance
3. Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al$_{2}$O$_{3}$ Overlayer and its Electric Properties
4. Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al2O3Passivation Layer
5. 145-MW/cm2 Heteroepitaxial Diamond MOSFETs With NO2 p-Type Doping and an Al2O3 Passivation Layer
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1. Dynamic switching operation of diamond MOSFETs with NO2 p-type doping and Al2O3 gate insulation and passivation;Journal of Vacuum Science & Technology B;2024-08-26
2. A Review of Diamond Materials and Applications in Power Semiconductor Devices;Materials;2024-07-11
3. Preparation of High Conductivity Hydrogenated Silicon-Doped Diamond and MOSFET;IEEE Transactions on Electron Devices;2024-04
4. Stable AC Stress Operation (100 h) of NO2 p-Type Doped Diamond MOSFETs;IEEE Electron Device Letters;2023-10
5. Long Stress (190 h) Operation of NO2 p-Type Doped Diamond MOSFETs;IEEE Electron Device Letters;2023-06
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