Degradation of β-Ga<sub>2</sub>O<sub>3</sub> Vertical Ni/Au Schottky Diodes Under Forward Bias-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Degradation of β-Ga₂O₃ Vertical Ni/Au Schottky Diodes Under Forward Bias

Published:2023-05 Issue:5 Volume:44 Page:725-728
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sun Rujun¹^ORCID,Balog Andrew R.²,Yang Haobo³,Alem Nasim²,Scarpulla Michael A.³^ORCID

Affiliation:

1. School of Microelectronics, Xidian University, Shaanxi, Xi'an, China

2. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA

3. Department of Electrical and Computer Engineering, The University of Utah, Salt Lake City, UT, USA

Funder

Air Force Office of Scientific Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10109212/10075434.pdf?arnumber=10075434

Reference27 articles.

1. The optimized interface characteristics of β-Ga2O3 Schottky barrier diode with low temperature annealing

2. Dramatic Improvement in the Rectifying Properties of Pd Schottky Contacts on β-Ga₂O₃ During Their High-Temperature Operation

3. Forward bias degradation and thermal simulations of vertical geometry β-Ga2O3 Schottky rectifiers

4. Rapid-thermal-annealing-induced microstructural evolution of Au/Ni/β-Ga2O3 Schottky diodes correlated with their electrical properties

5. Interfacial reactions of titanium/gold ohmic contacts with Sn-doped β-Ga2O3

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth of rutile GeO2 via MOCVD;Applied Physics Letters;2024-09-02

2. Impact of High-Temperature Forward Bias Stress on the Electrical Performance Degradation of β-Ga₂O₃ Schottky Barrier Diodes;IEEE Transactions on Electron Devices;2024-09

3. Epitaxial Growth of Ga2O3: A Review;Materials;2024-08-28

4. On-state electrical stress-induced degradation of NiO/β-Ga2O3 heterojunction pn diodes;Applied Physics Letters;2024-05-06

5. Temperature-dependent capacitance-voltage characteristics of β-Ga2O3 Schottky barrier diodes with (001) epitaxial grown layer using MOCVD;Materials Science in Semiconductor Processing;2024-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3