Interfacial reactions of titanium/gold ohmic contacts with Sn-doped β-Ga2O3
Author:
Affiliation:
1. Materials Science and Engineering Department, University of Michigan, Ann Arbor, Michigan 48109, USA
2. Electrical Engineering and Computer Science Department, University of Michigan, Ann Arbor, Michigan 48109, USA
Funder
Office of Naval Research Global
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5054624
Reference33 articles.
1. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs
2. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes
3. High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
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5. Recent progress in Ga2O3power devices
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