Forward bias degradation and thermal simulations of vertical geometry β-Ga2O3 Schottky rectifiers-Reference-Cited by-同舟云学术

Forward bias degradation and thermal simulations of vertical geometry β-Ga2O3 Schottky rectifiers

Published:2019-11 Issue:6 Volume:37 Page:061205
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Xian Minghan¹,Elhassani Randy¹,Fares Chaker¹^ORCID,Ren Fan¹^ORCID,Tadjer Marko²,Pearton S. J.³^ORCID

Affiliation:

1. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611

2. US Naval Research Laboratories, Washington, DC 20375

3. Department of Material Science and Engineering, University of Florida, Gainesville, Florida 32611

Funder

Division of Materials Research

Office of Naval Research

Defense Threat Reduction Agency

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.5127511

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