A 2.22 Mb/s True Random Number Generator Based on a GeTe<sub>x</sub> Ovonic Threshold Switching Memristor-Reference-Cited by-同舟云学术

A 2.22 Mb/s True Random Number Generator Based on a GeTe_x Ovonic Threshold Switching Memristor

Published:2023-05 Issue:5 Volume:44 Page:853-856
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Fu Yuyang¹^ORCID,Wen Jinyu²,Wang Lun²^ORCID,Yang Ling²^ORCID,Zhu Qihang²,Zuo Wenbin²^ORCID,Zhang Puyi¹,Li Yi²^ORCID,Tong Hao²^ORCID,Ma Guokun³^ORCID,Wang Hao³^ORCID,Miao Xiangshui²^ORCID

Affiliation:

1. School of Microelectronics and the Faculty of Physics and Electronics Science, Hubei University, Wuhan, China

2. School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China

3. School of Microelectronics and Faculty of Physics and Electronics Science, Hubei University, Wuhan, China

Funder

National Natural Science Foundation of China

Science and Technology Major Project of Hubei

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10109212/10076428.pdf?arnumber=10076428

Reference30 articles.

1. A novel true random number generator based on a stochastic diffusive memristor

2. Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

3. GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator

4. Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor

5. A High‐Performance Ag/TiN/HfO _x /HfO _y /HfO _x /Pt Diffusive Memristor for Calibration‐Free True Random Number Generator

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