Universal PBTI Relaxation on the Negative V<sub>TH</sub> Shift in Oxide Semiconductor Transistors and New Insights-Reference-Cited by-同舟云学术

Universal PBTI Relaxation on the Negative V_TH Shift in Oxide Semiconductor Transistors and New Insights

Published:2023-07 Issue:7 Volume:44 Page:1136-1139
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lin Zhiyu¹,Zhao Jinxiu¹^ORCID,Li Xiuyan²,Kang Lu³,Li Junkang³,Wu Ying³,Xu Jeffrey³,Si Mengwei¹^ORCID

Affiliation:

1. Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, China

2. Department of Nano/Micro-Electronics, Shanghai Jiao Tong University, Shanghai, China

3. Huawei Technologies Company Ltd., Shenzhen, China

Funder

National Key Research and Development Program of China

Shanghai Pilot Program for Basic Research-Shanghai Jiao Tong University

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10168002/10122685.pdf?arnumber=10122685

Reference18 articles.

1. New Insights into the Impact of Hydrogen Evolution on the Reliability of IGZO FETs: Experiment and Modeling

2. First demonstration of BEOL-compatible ultrathin atomic-layer-deposited InZnO transistors with GHz operation and record high bias-stress stability;zheng;IEDM Tech Dig,2022

3. Ubiquitous relaxation in BTI stressing—New evaluation and insights

4. Characterizing and Modelling of the BTI Reliability in IGZO-TFT using Light-assisted I-V Spectroscopy

5. Mobility–stability trade-off in oxide thin-film transistors

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1. Improvement of electrical characteristics and wet etching procedures for InGaTiO electrodes in organic light-emitting diodes through hydrogen doping;Journal of Alloys and Compounds;2024-06

2. The Role of Oxygen Vacancy and Hydrogen on the PBTI Reliability of ALD IGZO Transistors and Process Optimization;IEEE Transactions on Electron Devices;2024-05