Characterizing and Modelling of the BTI Reliability in IGZO-TFT using Light-assisted I-V Spectroscopy-Reference-Cited by-同舟云学术

Characterizing and Modelling of the BTI Reliability in IGZO-TFT using Light-assisted I-V Spectroscopy

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Wu Z.¹,Chasin A.¹,Franco J.¹,Subhechha S.¹,Dekkers H.¹,Bhuvaneshwari Y.V.¹,Belmonte A.¹,Rassoul N.¹,van Setten M.J.¹,Afanas'Ev V.²,Delhougne R.¹,Kaczer B.¹,Kar G.S.¹

Affiliation:

1. imec, Leuven,Belgium

2. KU Leuven,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019454.pdf?arnumber=10019454

Reference16 articles.

1. Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors

2. International Series on Advances in Solid State Electronics and Technology

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Aging-Aware LTPO DTCO for Large-Scale Integrated Circuit-Driven Flexible Intelligent Sensing System;IEEE Transactions on Electron Devices;2024-05

2. The Role of Oxygen Vacancy and Hydrogen on the PBTI Reliability of ALD IGZO Transistors and Process Optimization;IEEE Transactions on Electron Devices;2024-05

3. Electron emission from deep traps in HfO2 under thermal and optical excitation;Physical Review B;2024-04-17

4. Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

5. Fundamental understanding of NBTI degradation mechanism in IGZO channel devices;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14