Self-Heating Effect in a 65 nm MOSFET at Cryogenic Temperatures-Reference-Cited by-同舟云学术

Self-Heating Effect in a 65 nm MOSFET at Cryogenic Temperatures

Published:2022-03 Issue:3 Volume:69 Page:900-904
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Artanov Anton A.¹^ORCID,Gutierrez-D Edmundo A.²^ORCID,Cabrera-Galicia Alfonso R.¹,Kruth Andre¹,Degenhardt Carsten¹^ORCID,Durini Daniel²^ORCID,Mendez-V Jairo²^ORCID,Van Waasen Stefan¹^ORCID

Affiliation:

1. Central Institute of Engineering, Electronics and Analytics, Electronic Systems, Forschungszentrum Jülich GmbH, Jülich, Germany

2. Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Puebla, Mexico

Funder

Helmholtz Impuls- und Vernetzungsfond “Scalable Solid State Quantum Computing”

Mexico-CONACyT

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9722602/09680773.pdf?arnumber=9680773

Reference26 articles.

1. Study of self-heating effects in SOI and conventional MOSFETs with electro-thermal particle-based device simulator

2. Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K

3. Investigation of scattering mechanisms for scaled mosfets

4. Comparison of hot spot temperature between Si and SiC power MOSFET using electro-thermal analysis

5. Theoretical and experimental characterization of self-heating in silicon integrated devices operating at low temperatures

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