Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K-Reference-Cited by-同舟云学术

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Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K

Published:2019-08 Issue:8 Volume:66 Page:3498-3505
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Triantopoulos K.^ORCID,Casse M.^ORCID,Barraud S.^ORCID,Haendler S.,Vincent E.,Vinet M.,Gaillard F.,Ghibaudo G.^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8768425/08741185.pdf?arnumber=8741185

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon;Chip;2024-09

2. Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures;IEEE Transactions on Electron Devices;2024-06

3. CMOS on-chip thermometry at deep cryogenic temperatures;Applied Physics Reviews;2024-04-17

4. Impact of Self-Heating in 5nm FinFETs at Cryogenic Temperatures for Reliable Quantum Computing: Device-Circuit Interaction;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

5. On the Severity of Self-Heating in FDSOI at Cryogenic Temperatures: In-depth Analysis from Transistors to Full Processor;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

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