Comparison of hot spot temperature between Si and SiC power MOSFET using electro-thermal analysis-Reference-Cited by-同舟云学术

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Comparison of hot spot temperature between Si and SiC power MOSFET using electro-thermal analysis

Published:2017-05 Issue: Volume: Page:
ISSN:
Container-title:2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)
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Author:

Kibushi Risako,Hatakeyama Tomoyuki,Yuki Kazuhisa,Unno Noriyuki,Ishizuka Masaru

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7983314/7991835/07992584.pdf?arnumber=7992584

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions;Energies;2024-05-30

2. Self-Heating Effect in a 65 nm MOSFET at Cryogenic Temperatures;IEEE Transactions on Electron Devices;2022-03

3. Thermal management of automotive SiC-based on-board inverter with 500 W/cm² in heat flux, and Two-phase immersion cooling by breathing phenomenon spontaneously induced by lotus porous copper jointed onto a grooved heat transfer surface;Journal of Thermal Science and Technology;2020

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